The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 29, 2018

Filed:

Apr. 22, 2015
Applicant:

Seiko Instruments Inc., Chiba-shi, Chiba, JP;

Inventors:

Masakazu Sugiura, Chiba, JP;

Tsutomu Tomioka, Chiba, JP;

Hideyuki Sawai, Chiba, JP;

Atsushi Igarashi, Chiba, JP;

Nao Otsuka, Chiba, JP;

Daisuke Okano, Chiba, JP;

Assignee:

ABLIC INC., Chiba, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01K 7/01 (2006.01); G01K 3/00 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
G01K 7/01 (2013.01); G01K 3/005 (2013.01); H01L 27/0255 (2013.01);
Abstract

Provided is an overheat detection circuit configured to accurately detect a temperature of a semiconductor device even at high temperature and thus avoid outputting an erroneous detection result. The overheat detection circuit includes: a PN junction element, being a temperature sensitive element; a constant current circuit configured to supply the PN junction element with a bias current; a comparator configured to compare a voltage generated at the PN junction element and a reference voltage; a second PN junction element configured to cause a leakage current to flow through a reference voltage circuit at high temperature; and a third PN junction element configured to bypass a leakage current of the constant current circuit at the high temperature.


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