The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2018
Filed:
Feb. 11, 2016
International Business Machines Corporation, Armonk, NY (US);
Noel Arellano, Fremont, CA (US);
Teddie P. Magbitang, San Jose, CA (US);
Daniel P. Sanders, San Jose, CA (US);
Kristin Schmidt, Mountain View, CA (US);
Ankit Vora, San Jose, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A high-chi diblock copolymer (BCP) for self-assembly comprises a first block comprising repeat units of trimethylsilyl styrene (TMSS) and styrene, and a second block comprising an aliphatic carbonate repeat unit. The blocks are linked together by a fluorinated junction group L' in which none of the fluorines of L′ are covalently bound to an atomic center of the polymer backbone. A top-coat free film layer comprising the BCP, which is disposed on an underlayer and in contact with an atmosphere, is capable of forming a perpendicularly oriented lamellar domain pattern on an underlayer that is preferential or non-preferential to the domains of the block copolymer. The domain pattern can be selectively etched to provide a relief pattern comprising a remaining domain. The relief pattern having good critical dimensional uniformity compared to an otherwise identical polymer lacking the silicon.