The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2018
Filed:
Jul. 18, 2014
Applicant:
3m Innovative Properties Company, St. Paul, MN (US);
Inventors:
Matthew S. Stay, Minneapolis, MN (US);
Mikhail L. Pekurovsky, Bloomington, MN (US);
Shawn C. Dodds, St. Paul, MN (US);
Ann M. Gilman, Woodbury, MN (US);
Daniel J. Theis, Mahtomedi, MN (US);
Assignee:
3M INNOVATIVE PROPERTIES COMPANY, St. Paul, MN (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1345 (2006.01); H05K 3/28 (2006.01); G06F 3/041 (2006.01); G06F 3/047 (2006.01); H05K 1/02 (2006.01); H05K 1/09 (2006.01); H05K 3/10 (2006.01); H05K 3/04 (2006.01); H05K 3/32 (2006.01); H05K 1/03 (2006.01);
U.S. Cl.
CPC ...
H05K 3/284 (2013.01); G06F 3/041 (2013.01); G06F 3/047 (2013.01); G06F 3/0412 (2013.01); H05K 1/028 (2013.01); H05K 1/0296 (2013.01); H05K 1/09 (2013.01); H05K 1/097 (2013.01); H05K 3/048 (2013.01); H05K 3/103 (2013.01); H05K 3/323 (2013.01); G06F 2203/04103 (2013.01); G06F 2203/04112 (2013.01); H05K 1/0393 (2013.01); H05K 2201/026 (2013.01); H05K 2201/10128 (2013.01); H05K 2203/0143 (2013.01); H05K 2203/1469 (2013.01); H05K 2203/1545 (2013.01);
Abstract
A method for making an electronic assembly includes applying a conductive adhesive to a resist layer overlying a patterned conductive nanowire layer on a substrate and engaging an electrical contact of an electronic component with the conductive adhesive to provide an electrical connection between the electronic component and the conductive nanowire layer.