The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 22, 2018

Filed:

Jun. 24, 2016
Applicant:

General Electric Company, Schenectady, NY (US);

Inventors:

Di Zhang, Niskayuna, NY (US);

Rui Zhou, Niskayuna, NY (US);

Luis Garces, Niskayuna, NY (US);

Jiangbiao He, Schenectady, NY (US);

Assignee:

GENERAL ELECTRIC COMPANY, Schenectady, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 7/5395 (2006.01); H02M 1/00 (2006.01); H02M 7/487 (2007.01);
U.S. Cl.
CPC ...
H02M 7/5395 (2013.01); H02M 7/487 (2013.01); H02M 2001/0048 (2013.01); H02M 2001/0054 (2013.01);
Abstract

The present disclosure is directed to a system and method for modulating a voltage output of a hybrid converter system having first and second set of Si-based power electronic devices coupled to first and second voltage source, respectively, and a first set of SiC-based power electronic devices coupled to the first and second sets of Si-based power electronic devices. The method includes switching between operational states of the hybrid converter system based on a desired voltage output, wherein each operational state includes one of the Si-based power electronic devices from the first and second sets of Si-based power electronic devices and one of the SiC-based devices from the first set of SiC-based power electronic devices being switched on and the remaining power electronic devices being switched off. Each SiC-based power electronic device of the first set of SiC-based power electronic devices switches at a higher frequency as compared to each Si-based power electronic device of the first and second sets of the Si-based power electronic devices.


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