The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 22, 2018

Filed:

Dec. 03, 2012
Applicant:

Basf SE, Ludwigshafen, DE;

Inventors:

Patrice Bujard, Courtepin, CH;

Natalia Chebotareva, Hagenthal le Bas, FR;

Thomas Weitz, Mannheim, DE;

Pascal Hayoz, Hofstetten, CH;

Assignee:

BASF SE, Ludwigshafen, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 51/00 (2006.01); C09B 57/00 (2006.01); C09B 69/10 (2006.01); C08G 61/12 (2006.01); C08L 65/00 (2006.01); H01L 51/05 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0003 (2013.01); C08G 61/124 (2013.01); C08G 61/126 (2013.01); C08L 65/00 (2013.01); C09B 57/004 (2013.01); C09B 69/105 (2013.01); C09B 69/109 (2013.01); H01L 51/002 (2013.01); H01L 51/005 (2013.01); H01L 51/0035 (2013.01); H01L 51/0036 (2013.01); H01L 51/0043 (2013.01); H01L 51/0068 (2013.01); H01L 51/0072 (2013.01); H01L 51/0512 (2013.01); C08G 2261/1412 (2013.01); C08G 2261/226 (2013.01); C08G 2261/228 (2013.01); C08G 2261/3223 (2013.01); C08G 2261/344 (2013.01); C08G 2261/364 (2013.01); C08G 2261/411 (2013.01); C08G 2261/91 (2013.01); C08G 2261/92 (2013.01); C08G 2261/95 (2013.01); C08L 2205/02 (2013.01); H01L 51/0053 (2013.01); H01L 51/0545 (2013.01); H01L 51/0558 (2013.01);
Abstract

The present invention provides an electronic component or device comprising a gate electrode, a source electrode and a drain electrode, wherein said component or device further comprising an organic semiconducting (OSC) material that is provided between the source and drain electrode, wherein the OSC material comprises (a) a polymer represented by formula: (I), and (b) a compound of formula (II). High quality OFETs can be fabricated by the choice of a semiconductor material, which is comprised of a polymer represented by formula I and (b) a compound of formula II.


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