The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 22, 2018

Filed:

Feb. 16, 2016
Applicant:

Inston Inc., Santa Monica, CA (US);

Inventor:

Qi Hu, Cypress, CA (US);

Assignee:

Inston Inc., Santa Monica, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/82 (2006.01); H01L 43/00 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
H01L 43/08 (2013.01); G11C 11/161 (2013.01); G11C 11/1675 (2013.01); H01L 43/10 (2013.01);
Abstract

Robust magnetoelectric junctions (MEJs) are disclosed. In one embodiment, an MEJ includes: a first fixed layer; a free layer; a seed layer; a cap layer; and a dielectric layer disposed between the first fixed layer and the free layer; where: one of the seed layer and the cap layer is disposed adjacently to a ferromagnetic layer; the first fixed layer is magnetized in a first direction; the free layer can adopt a magnetization direction that is either substantially parallel with or substantially antiparallel with the first direction; when a potential difference is applied across the MEJ, the coercivity of the free layer is reduced for the duration of the application of the potential difference; and at least one of the seed layer and the cap layer includes one of: Molybdenum, Tungsten, Iridium, Bismuth, Rhenium, and Gold.


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