The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2018
Filed:
Mar. 23, 2015
Shanghai Chiptek Semiconductor Technology Co., Ltd., Shanghai, CN;
Zhuoran Cai, Shanghai, CN;
Hai Gao, Shanghai, CN;
Zhi Liu, Shanghai, CN;
Xianglin Yin, Shanghai, CN;
Zhengwei Liu, Shanghai, CN;
SHANGHAI CHIPTEK SEMICONDUCTOR TECHNOLOGY CO., LTD., Shanghai, CN;
Abstract
A non-polar blue light LED epitaxial wafer based on an LAO substrate comprises the LAO substrate, and a buffer layer, a first non-doped layer, a first doped layer, a quantum well layer, an electron barrier layer and a second doped layer that are sequentially arranged on the LAO substrate. A preparation method of the non-polar blue light LED epitaxial wafer includes: a) adopting the LAO substrate, selecting a crystal orientation, and cleaning a surface of the LAO substrate; b) annealing the LAO substrate, and forming an AlN seed crystal layer on the surface of the LAO substrate; and c) sequentially forming a non-polar m face GaN buffer layer, a non-polar non-doped u-GaN layer, a non-polar n-type doped GaN film, a non-polar InGaN/GaN quantum well, a non-polar m face AlGaN electron barrier layer and a non-polar p-type doped GaN film on the LAO substrate by adopting metal organic chemical vapor deposition.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile