The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2018
Filed:
May. 05, 2016
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jung Sub Kim, Hwaseong-si, KR;
Dong Hyun Lee, Seoul, KR;
Jin Sub Lee, Suwon-si, KR;
Kyung Wook Hwang, Hwaseong-si, KR;
In Su Shin, Incheon, KR;
Eui Joon Yoon, Seoul, KR;
Gun Do Lee, Seoul, KR;
Jeong Hwan Jang, Busan, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION, Seoul, KR;
Abstract
A semiconductor ultraviolet light emitting device includes: a substrate; a buffer layer disposed on the substrate and comprising a plurality of nanorods between which a plurality of voids are formed; a first conductive nitride layer disposed on the buffer layer and having a first conductive AlGaN layer; an active layer disposed on the first conductive nitride layer and having a quantum well including AlInGaN (0≤x+y≤1, 0≤y<0.15); and a second conductive nitride layer disposed on the active layer and having a second conductive AlGaN layer, in which the plurality of nanorods satisfy 3.5≤n(λ)×D/λ≤5.0, where λ represents a wavelength of light generated by the active layer, n(λ) represents a refractive index of the plurality of nanorods at a wavelength of λ, and D represents diameters of the plurality of nanorods.