The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2018
Filed:
Nov. 13, 2014
Shindengen Electric Manufacturing Co., Ltd., Chiyoda-ku, Tokyo, JP;
SHINDENGEN ELECTRIC MANUFACTURING CO., LTD., Chiyoda-ku, Tokyo, JP;
Abstract
Provided is a method of manufacturing a semiconductor device according to the present invention, a ring-shaped electrode platewith an opening having a diameter smaller than a diameter of a semiconductor wafer W is disposed between a first electrode plateand a second electrode plate, the semiconductor wafer W is arranged between the ring-shaped electrode plateand the second electrode plate, and a glass film is formed on a glass film forming scheduled surface in a state where a potential lower than a potential Vof the second electrode plateis applied to the ring-shaped electrode plate. According to the method of manufacturing a semiconductor device of the present invention, even when the glass film forming step is performed using the semiconductor wafer where the base insulating film is formed on the glass film forming scheduled surface as the semiconductor wafer, lowering of deposition efficiency of fine glass particles on the outer peripheral portion of the semiconductor wafer can be suppressed and hence, highly reliable semiconductor devices can be manufactured with high productivity.