The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2018
Filed:
Mar. 23, 2017
International Business Machines Corporation, Armonk, NY (US);
Utz Herwig Hahn, Adliswil, CH;
Heinz Schmid, Waedenswil, CH;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A non-polar, III-Nitride semiconductor fin field-effect transistor (hereafter 'finFET') includes both a fin and a Si(110) silicon substrate, the silicon substrate having a support surface parallel to a Si(110) plane of the silicon substrate. The fin includes a III-Nitride crystalline layer grown along its c-direction, so as to have sidewalls that are parallel to m and a planes of the III-Nitride crystalline layer. The c-direction is parallel to a Si<111> direction of the silicon substrate, such that two opposite ones of said sidewalls are parallel to the support surface of the silicon substrate. Related devices and methods of fabrication are also provided.