The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 22, 2018

Filed:

Nov. 08, 2016
Applicant:

Vanguard International Semiconductor Corporation, Hsinchu, TW;

Inventors:

Pei-Heng Hung, New Taipei, TW;

Manoj Kumar, Jharkhand, IN;

Chia-Hao Lee, New Taipei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/36 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 21/265 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7835 (2013.01); H01L 21/265 (2013.01); H01L 21/76243 (2013.01); H01L 29/0649 (2013.01); H01L 29/36 (2013.01);
Abstract

A semiconductor substrate structure includes a substrate having a first conductivity type, an oxide layer disposed on the substrate, and a semiconductor layer disposed on the oxide layer. The semiconductor substrate structure also includes a first buried layer disposed in the semiconductor layer, having a second conductivity type opposite to the first conductivity type. The semiconductor substrate structure further includes a second buried layer disposed in the semiconductor layer and above the first buried layer, having the first conductivity type, wherein the first buried layer and the second buried layer are separated by a distance.


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