The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2018
Filed:
Jun. 05, 2017
Applicant:
Vishay-siliconix, Santa Clara, CA (US);
Inventors:
Chanho Park, San Jose, CA (US);
Ayman Shibib, San Jose, CA (US);
Kyle Terrill, Santa Clara, CA (US);
Assignee:
Vishay-Siliconix, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/40 (2006.01); H01L 21/336 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/36 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7802 (2013.01); H01L 29/086 (2013.01); H01L 29/0865 (2013.01); H01L 29/0878 (2013.01); H01L 29/1095 (2013.01); H01L 29/404 (2013.01); H01L 29/407 (2013.01); H01L 29/41741 (2013.01); H01L 29/66712 (2013.01); H01L 29/66734 (2013.01); H01L 29/7813 (2013.01); H01L 29/36 (2013.01); H01L 29/41766 (2013.01); H01L 29/872 (2013.01);
Abstract
A semiconductor device includes a trench formed in an epitaxial layer and an oxide layer that lines the sidewalls of the trench. The thickness of the oxide layer is non-uniform, so that the thickness of the oxide layer toward the top of the trench is thinner than it is toward the bottom of the trench. The epitaxial layer can have a non-uniform dopant concentration, where the dopant concentration varies according to the thickness of the oxide layer.