The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2018
Filed:
Aug. 27, 2014
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Takashi Okawa, Nisshin, JP;
Hiroomi Eguchi, Seto, JP;
Hiromichi Kinpara, Seto, JP;
Satoshi Ikeda, Toyota, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Tokyo, JP;
Abstract
Presented is a bipolar transistor capable of improving a current amplification rate while improving voltage resistance. A bipolar transistor is provided with a p-type emitter region, a p-type collector region, an n-type base region located between the emitter region and the collector region, a p-type first embedded region located below the base region, and an n-type region having a lower n-type impurity concentration than the base region. The base region is provided with a first high-concentration region and a low-concentration region positioned above the first embedded region, and a second high-concentration region positioned on a collector region side than the low-concentration region, wherein the second high-concentration region has a higher n-type impurity concentration than the low-concentration region.