The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 22, 2018

Filed:

Jan. 12, 2017
Applicant:

Chengdu Monolithic Power Systems Co., Ltd., Chengdu, CN;

Inventor:

Yanjie Lian, Chengdu, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/4763 (2006.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01); H01L 29/49 (2006.01); H01L 29/423 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/401 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/02129 (2013.01); H01L 21/02164 (2013.01); H01L 21/02274 (2013.01); H01L 21/28158 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 21/32055 (2013.01); H01L 21/32135 (2013.01); H01L 21/32139 (2013.01); H01L 29/42364 (2013.01); H01L 29/4916 (2013.01); H01L 29/66681 (2013.01); H01L 29/7816 (2013.01);
Abstract

A method for forming a steeped oxide on a substrate is described: successively forming a first pad oxide layer, a nitride layer, a second pad oxide layer and a poly layer on the substrate; etching the poly layer to have an opening for the stepped oxide region; isotropically etching the second pad oxide layer to the nitride layer through the opening to form a stepped trench; isotropically etching the nitride layer to the first pad oxide layer through the opening to expand the stepped trench; filling the stepped trench with dielectric material to form a dielectric layer; planarizing the dielectric layer; removing the poly layer; removing the second pad oxide layer; removing the nitride layer; removing the portion of the first pad oxide layer uncovered by the dielectric layer such that the remaining first pad oxide layer together the remaining dielectric layer forms the stepped oxide.


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