The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2018
Filed:
Aug. 01, 2017
Fuji Electric Co., Ltd., Kanagawa, JP;
Ryohei Takayanagi, Nagano, JP;
Hiroki Wakimoto, Nagano, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
An embodiment of a silicon carbide semiconductor device includes one or more inner cells each having a MOSFET and one or more outer peripheral cells that does not have a MOSFET structure, and the area (surface area) of the pcontact region of each of the outermost peripheral cells is less than the surface area of an pcontact region of each of the inner cells, for example, so that a unit total resistance of pcontact regions of the outermost peripheral cells, as measured in a depth direction of the semiconductor substrate with respect to a unit area in a surface of the semiconductor substrate, is greater than a unit total resistance of the pcontact regions of the inner cells, as measured in the depth direction of the semiconductor substrate with respect to the unit area in the surface of the semiconductor substrate.