The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 22, 2018

Filed:

May. 18, 2017
Applicant:

Lapis Semiconductor Co., Ltd., Yokohama, JP;

Inventor:

Masao Okihara, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 27/144 (2006.01); H01L 31/0216 (2014.01); H01L 31/103 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1443 (2013.01); H01L 31/02165 (2013.01); H01L 31/103 (2013.01);
Abstract

A semiconductor device includes first and second photo-electric conversion elements, each having a light-receiving surface, disposed adjacent to each other, each outputting a light current that is a current corresponding to an intensity of received light, a first filter disposed on the light-receiving surface of the first photo-electric conversion element, a second filter disposed on the light-receiving surface of the second photo-electric conversion element, and a third filter disposed on the light-receiving surface of the second photo-electric conversion element and being in contact with the second filter, one end of the second filter and one end of the third filter overlapping one end of the first filter at a vicinity of a boundary between the first photo-electric conversion element and the second photo-electric conversion element.


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