The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2018
Filed:
Mar. 03, 2016
Kyoung Hwan Yeo, Seoul, KR;
Keunhee Bai, Suwon-si, KR;
Seungseok Ha, Hwaseong-si, KR;
Eunsil Park, Suwon-si, KR;
Sunhom Steve Paak, Seoul, KR;
Heonjong Shin, Yongin-si, KR;
Dongho Cha, Seongnam-si, KR;
Kyoung Hwan Yeo, Seoul, KR;
KeunHee Bai, Suwon-si, KR;
Seungseok Ha, Hwaseong-si, KR;
Eunsil Park, Suwon-si, KR;
Sunhom Steve Paak, Seoul, KR;
Heonjong Shin, Yongin-si, KR;
Dongho Cha, Seongnam-si, KR;
Abstract
Provided is a semiconductor device with a field effect transistor. The semiconductor device may include a substrate including an active pattern, a separation structure crossing the active pattern and dividing the active pattern into first and second region. The separation structure may include a first insulating pattern that fills a recess region between the first and second regions. The first insulating pattern may have a concave top surface.