The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 22, 2018

Filed:

Sep. 03, 2015
Applicant:

Fuji Electric Co., Ltd., Kawasaki-shi, JP;

Inventors:

Takashi Saito, Matsumoto, JP;

Fumihiko Momose, Nagano, JP;

Kazumasa Kido, Matsumoto, JP;

Yoshitaka Nishimura, Azumino, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki-Shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 24/03 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 24/85 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0381 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/03464 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/291 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/45015 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48105 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48755 (2013.01); H01L 2224/48855 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/83447 (2013.01); H01L 2224/85203 (2013.01); H01L 2224/85205 (2013.01); H01L 2224/92147 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10272 (2013.01);
Abstract

A highly reliable semiconductor device capable of heavy current conduction and high temperature operation has a module structure in which a semiconductor chip and a circuit pattern are electrically connected via a wire. A front surface metal film is formed on a front surface electrode of the chip, and the wire is bonded to the front surface metal film by wire bonding. The chip has a front surface electrode on the front surface of an Si substrate or an SiC substrate, and has a rear surface substrate on the rear surface thereof. The front surface metal film is a Ni film or a Ni alloy film of having a thickness ranging from 3 μm to 7 μm. The wire is an Al wire having an increased recrystallizing temperature and improved strength due to controlling the crystal grain sizes before wire bonding to a range of 1 μm to 20 μm.


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