The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 22, 2018

Filed:

Sep. 14, 2016
Applicant:

Analog Devices, Inc., Norwood, MA (US);

Inventor:

Gabriele Bernardinis, Los Gatos, CA (US);

Assignee:

Analog Devices, Inc., Norwood, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/08 (2006.01); H01L 23/64 (2006.01); H01L 25/18 (2006.01); H01L 25/065 (2006.01); H01L 23/522 (2006.01); H01L 23/495 (2006.01); H01L 23/48 (2006.01); H01L 25/00 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/645 (2013.01); H01L 21/76885 (2013.01); H01L 23/481 (2013.01); H01L 23/49575 (2013.01); H01L 23/5227 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06506 (2013.01); H01L 2225/06541 (2013.01);
Abstract

Isolators for providing electrical isolation between two circuits operating at different voltages are described, in which multiple semiconductor dies including the isolator components and the components of the two circuits are stacked on top of each other to provide a laterally-compact arrangement. An isolation barrier electrically separates the two circuits, and the isolator may provide a communication channel for transfer of information and/or power between the two circuits. The isolator may be included in an integrated device having a stacked die configuration where a first semiconductor die includes the isolator and components of the first of the two circuits, and a second semiconductor die positioned over the first semiconductor die includes components of the second of the two circuits. Two components of the isolator may be formed in separate layers of the first semiconductor die.


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