The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2018
Filed:
Feb. 21, 2017
Applicant:
The United States of America As Represented BY the Administrator of Nasa, Washington, DC (US);
Inventors:
David J. Spry, Medina, OH (US);
Philip G. Neudeck, Olmsted Township, OH (US);
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/34 (2006.01); H01L 23/532 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53266 (2013.01); H01L 21/31116 (2013.01); H01L 21/7685 (2013.01); H01L 21/76802 (2013.01); H01L 21/76879 (2013.01); H01L 23/5226 (2013.01);
Abstract
A process of fabrication and the resulting integrated circuit device is made of patterned metal electrical interconnections between semiconductor devices residing on and forming extremely harsh environment integrated circuit chips. The process enables more complicated wide band gap semiconductor integrated circuits with more than one level of interconnect to function for prolonged time periods (over 1000 hours) at much higher temperatures (500 C).