The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2018
Filed:
Mar. 03, 2016
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Chenglong Zhang, Shanghai, CN;
Haiyang Zhang, Shanghai, CN;
Abstract
A method for forming a semiconductor structure includes providing a semiconductor substrate; forming a plurality of fins on the semiconductor substrate; forming a plurality of gate structures on the plurality of fins and sidewall spacers on side surfaces of the gate structures; forming a first dielectric layer on the semiconductor substrate; recessing the gate structures to form a plurality of trenches on top surfaces of the gate structures; forming a mask material layer filling the trenches and on the first dielectric layer; forming a protective layer on the top surfaces of the remaining gate structures and a mask layer on a portion of the first dielectric layer between adjacent gate structures by etching the mask material layer; forming contact through-holes in the first dielectric layer between adjacent gates structure at both sides of the mask layer; and forming a metal contact via in each of the contact through-holes.