The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 22, 2018

Filed:

Aug. 18, 2016
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Waikit Fung, Saratoga, CA (US);

Liang Meng, Milpitas, CA (US);

Anand Chandrashekar, Fremont, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01); H01L 21/67 (2006.01); H01L 21/285 (2006.01); H01J 37/32 (2006.01); C23C 16/505 (2006.01); C23C 16/04 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32136 (2013.01); C23C 16/045 (2013.01); C23C 16/505 (2013.01); H01J 37/321 (2013.01); H01J 37/3244 (2013.01); H01J 37/32091 (2013.01); H01J 37/32146 (2013.01); H01J 37/32449 (2013.01); H01L 21/28556 (2013.01); H01L 21/28568 (2013.01); H01L 21/67069 (2013.01); H01L 21/76877 (2013.01); H01J 2237/334 (2013.01);
Abstract

Methods and apparatuses for filling features with metal materials such as tungsten-containing materials in a substantially void-free manner are provided. In certain embodiments, the method involves depositing an initial layer of a metal such as a tungsten-containing material followed by removing a portion of the initial layer to form a remaining layer, which is differentially passivated along the depth of the high-aspect ratio feature. The portion may be removed by exposing the tungsten-containing material to a plasma generated from a fluorine-containing nitrogen-containing gas and pulsing and/or ramping the plasma during the exposure.


Find Patent Forward Citations

Loading…