The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2018
Filed:
Jan. 27, 2017
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
Makoto Utsumi, Tsukuba, JP;
Yoshiyuki Sakai, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;
Abstract
A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate; a nickel silicide film provided on a surface of the silicon carbide semiconductor substrate and functioning as an ohmic contact; and an extraction electrode contacting the ohmic contact on a side different from a silicon carbide semiconductor substrate side. The silicon carbide semiconductor substrate side of the ohmic contact is mainly formed from a NiSi phase and an extraction electrode side thereof is mainly formed from a NiSi phase. The ohmic contact includes carbon on the silicon carbide semiconductor substrate and includes no carbon on the extraction electrode side.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile