The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2018
Filed:
May. 24, 2017
National Chung Shan Institute of Science and Technology, Taoyuan, TW;
Jian-Long Ruan, Taoyuan, TW;
Shyh-Jer Huang, Taoyuan, TW;
Hsin-Chieh Yu, Taoyuan, TW;
Yang-Kuo Kuo, Taoyuan, TW;
NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY, Taoyuan, TW;
Abstract
A method of manufacturing an epitaxiable heat-dissipating substrate comprises the steps of (A) forming a roughened surface on a substrate made of a polycrystalline or amorphous material with a high thermal conductivity coefficient; (B) forming a flat layer on the roughened surface; and (C) forming a buffer layer on the flat layer. The flat layer reduces the surface roughness of the substrate, and then the buffer layer functions as a base for epitaxial growth, thereby being directly applicable to production of semiconductor devices which are flat and capable of isotropic epitaxial growth.