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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9978587 B1

PDFFull Text
Date of Patent:
May. 22, 2018

Filed:

Jul. 21, 2015

Method of manufacturing semiconductor device including forming a film containing a first element, a second element and carbon, substrate processing apparatus, and recording medium

Applicant:

Hitachi Kokusai Electric Inc., Tokyo, JP;

Inventors:

Satoshi Shimamoto, Toyama, JP;

Yoshiro Hirose, Toyama, JP;

Ryuji Yamamoto, Tokyo, JP;

Assignee:

Hitachi Kokusai Electric Inc., Tokyo, JP;

Attorney:

Volpe and Koenig, P.C.

Primary Examiner:

Charles Garber

Assistant Examiner:

Brigitte Paterson

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/67 (2006.01); C23C 16/02 (2006.01); C23C 16/30 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C23C 16/0272 (2013.01); C23C 16/30 (2013.01); C23C 16/45531 (2013.01); H01L 21/022 (2013.01); H01L 21/0214 (2013.01); H01L 21/0234 (2013.01); H01L 21/02129 (2013.01); H01L 21/02167 (2013.01); H01L 21/02211 (2013.01); H01L 21/02304 (2013.01); H01L 21/02321 (2013.01); H01L 21/67017 (2013.01); H01L 21/02274 (2013.01);
Abstract

A technique includes forming a film containing a first element, a second element and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing supplying a first precursor having chemical bonds between the first elements to a substrate, supplying a second precursor having chemical bonds between the first element and carbon without having the chemical bonds between the first elements to the substrate, and supplying a first reactant containing the second element to the substrate.

Find Patent Forward Citations

Shimamoto, Satoshi. (2018). Method of manufacturing semiconductor device including forming a film containing a first element, a second element and carbon, substrate processing apparatus, and recording medium (U.S. Patent No. 9978587). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9978587

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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