The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2018
Filed:
Dec. 19, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Yo-han Lee, Incheon, KR;
Ji-suk Kim, Seoul, KR;
Chang-yeon Yu, Hwaseong-si, KR;
Jin-young Chun, Seoul, KR;
Se-heon Baek, Seoul, KR;
Jun-young Ko, Seoul, KR;
Seong-ook Jung, Seoul, KR;
Ji-su Kim, Incheon, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Industry-Academic Cooperation Foundation, Yonsei University, Seoul, KR;
Abstract
A data read operation method of a memory device includes applying a read voltage having a first preparation level and a first target level to a word line of a selected cell in the memory device to read a program state of the selected cell, applying a first read pass voltage having a second preparation level and a second target level to at least one word line of first non-selected cells not adjacent to the selected cell and in the same string as the selected cell, and applying a second read pass voltage having a third target level to a word line of at least one second non-selected cell adjacent to the selected cell.