The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 22, 2018

Filed:

Feb. 28, 2017
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Chika Tanaka, Fujisawa, JP;

Keiji Ikeda, Kawasaki, JP;

Toshinori Numata, Yokkaichi, JP;

Tsutomu Tezuka, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/02 (2006.01); G11C 11/4091 (2006.01); G11C 11/404 (2006.01); G11C 11/408 (2006.01); G11C 11/4094 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4091 (2013.01); G11C 11/4045 (2013.01); G11C 11/4087 (2013.01); G11C 11/4094 (2013.01);
Abstract

According to one embodiment, a semiconductor memory device includes a memory cell, a sense amplifier, a first transfer transistor, a second transfer transistor, and a controller. The memory cell can store a first value and a second value. The sense amplifier amplifies the first value or the second value read from the memory cell to the sense node. The first transfer transistor has a first control terminal connected to the sense node. The second transfer transistor has a second control terminal connected to the sense node. The controller applies a backgate potential to backgate terminals of the first transfer transistor and the second transfer transistor.


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