The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2018
Filed:
Feb. 20, 2014
Applicant:
Osaka University, Osaka, JP;
Inventors:
Seiichi Tagawa, Suita, JP;
Akihiro Oshima, Suita, JP;
Assignee:
OSAKA UNIVERSITY, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); G03F 7/38 (2006.01); G03F 7/32 (2006.01);
U.S. Cl.
CPC ...
G03F 7/2022 (2013.01); G03F 7/203 (2013.01); G03F 7/2032 (2013.01); G03F 7/32 (2013.01); G03F 7/38 (2013.01);
Abstract
A resist patterning method according to the present invention includes: a resist layer forming step Sof forming a resist layeron a substrate; an activating step Sof activating the resist layer by irradiation with an activating energy beam; a decay inhibiting step Sof inhibiting decay of the activity of the resist layer; a latent pattern image forming step Sof forming a latent pattern image in the activated resist layer by irradiation with a latent image forming energy beam; and a developing step Sof developing the resist layer.