The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2018
Filed:
Jan. 06, 2016
National University Corporation Toyohashi University of Technology, Toyohashi-shi, Aichi, JP;
Fumihiro Dasai, Toyohashi, JP;
Kazuaki Sawada, Toyohashi, JP;
Abstract
Provided is a charge-transfer-type sensor suitable for high integration while eliminating a potential barrier. A sensor provided with a semiconductor substratepartitioned into a sensing regionin which a potential varies in corresponding fashion to a variation in the external environment, a charge input regionfor supplying charges to the sensing region, an input charge control regioninterposed between the sensing regionand the charge input region, and a charge accumulation regionfor accumulating electric charges transported from the sensing region, the sensor for detecting the amount of electric charges accumulated in the charge accumulation region, wherein a diffusion layeris formed between the input charge control regionand the sensing regionof the substrate, and dopants for producing charges having the same polarity as the charges supplied from the charge input regionare diffused in the diffusion layer