The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2018
Filed:
Apr. 03, 2017
Applicant:
Coherent Lasersystems Gmbh & Co. KG, Göttingen, DE;
Inventor:
Paul Van Der Wilt, Göttingen, DE;
Assignee:
Coherent LaserSystems GmbH & Co. KG, Göttingen, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01J 3/00 (2006.01); G01N 21/958 (2006.01); H04N 7/18 (2006.01); G01N 21/27 (2006.01); H01S 3/00 (2006.01); H01S 3/225 (2006.01); G01N 21/84 (2006.01);
U.S. Cl.
CPC ...
G01N 21/958 (2013.01); G01N 21/27 (2013.01); H04N 7/183 (2013.01); G01N 2021/8477 (2013.01); H01S 3/005 (2013.01); H01S 3/225 (2013.01);
Abstract
A method of evaluating a crystallized silicon layer on a substrate includes injecting light into the substrate in such a way that it is wave-guided by the substrate. Wave-guided injected light is diffracted out of the substrate by periodic features of the silicon layer. The diffracted light is detected and processed to evaluate the crystalline layer.