The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2018
Filed:
Nov. 20, 2014
Applicant:
King Abdullah University of Science and Technology, Thuwal, SA;
Inventors:
Jesus Alfonso Caraveo Frescas, Thuwal, SA;
Husam Alshareef, Thuwal, SA;
Assignee:
KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY, Thuwal, SA;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01K 7/00 (2006.01); G01K 3/00 (2006.01); G01K 7/01 (2006.01); H01L 29/24 (2006.01); G01K 3/04 (2006.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 29/775 (2006.01);
U.S. Cl.
CPC ...
G01K 7/01 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); G01K 3/04 (2013.01); H01L 29/0673 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78693 (2013.01); H01L 29/78696 (2013.01); H01L 29/775 (2013.01);
Abstract
Embodiments of the present disclosure include nanowire field-effect transistors, systems for temperature history detection, methods for thermal history detection, a matrix of field effect transistors, and the like.