The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2018
Filed:
Nov. 24, 2014
Applicant:
Sony Corporation, Tokyo, JP;
Inventor:
Kojiro Yagami, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01J 5/08 (2006.01); H04N 5/33 (2006.01); H04N 5/232 (2006.01); G01J 1/42 (2006.01); G01J 3/36 (2006.01); G01J 5/20 (2006.01); G01J 5/00 (2006.01);
U.S. Cl.
CPC ...
G01J 5/0853 (2013.01); G01J 1/42 (2013.01); G01J 3/36 (2013.01); G01J 5/0846 (2013.01); G01J 5/20 (2013.01); H04N 5/23241 (2013.01); H04N 5/33 (2013.01); G01J 2005/0077 (2013.01);
Abstract
An infrared detector includes a source region and a drain region which are formed on a semiconductor substrate, an infrared ray absorbing film as a gate insulating film formed on the semiconductor substrate, and a gate electrode which is formed of a transparent electrode for infrared rays on the gate insulating film, in which, when a predetermined voltage is applied to the gate electrode, a predetermined current flows between the source region and the drain region.