The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 22, 2018

Filed:

Nov. 18, 2013
Applicant:

National Oilwell Dht, L.p., Conroe, TX (US);

Inventors:

Guodong Zhan, II, Spring, TX (US);

Michael Scott Nixon, Pearland, TX (US);

Assignee:

NATIONAL OILWELL DHT, L.P., Conroe, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B24D 3/00 (2006.01); B24D 18/00 (2006.01); C30B 33/06 (2006.01); C30B 25/00 (2006.01); C23C 16/27 (2006.01); C30B 29/04 (2006.01); E21B 10/567 (2006.01); C30B 33/00 (2006.01); B24D 99/00 (2010.01); C30B 25/10 (2006.01); E21B 10/42 (2006.01); E21B 10/55 (2006.01); B24D 3/02 (2006.01); B24D 11/00 (2006.01); C09K 3/14 (2006.01); E21B 10/54 (2006.01);
U.S. Cl.
CPC ...
C30B 33/06 (2013.01); B24D 18/0009 (2013.01); B24D 99/005 (2013.01); C23C 16/271 (2013.01); C30B 25/00 (2013.01); C30B 25/10 (2013.01); C30B 29/04 (2013.01); C30B 33/00 (2013.01); E21B 10/42 (2013.01); E21B 10/55 (2013.01); E21B 10/567 (2013.01); E21B 2010/545 (2013.01);
Abstract

Systems and methods of forming components from CVD single crystal diamonds that can withstand high temperatures and pressures, for example, in a mining and/or drilling environment. This may be accomplished by transforming a graphite powder by hot-filament chemical vapor deposition (HFCVD) into a CVD single diamond crystal powder, growing a plurality of CVD single diamond crystals on a planar surface of a substrate or on a dowel. In one example, if a substrate is used as the growth surface, the plurality of CVD single crystals grow in at least one layer on the substrate and at least a portion of the plurality of CVD single diamond crystals are removed from the substrate in the form of a plurality of discrete intact sheets of CVD single diamond crystals, stacked in a mold, and sintered, for example, to form a CVD single crystal diamond table.


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