The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2018
Filed:
Sep. 13, 2012
Takaomi Sugihara, Tokyo, JP;
Masaaki Asakura, Tokyo, JP;
Takeshi Tokunaga, Tokyo, JP;
Tetsuya Sadaki, Tokyo, JP;
Takaomi Sugihara, Tokyo, JP;
Masaaki Asakura, Tokyo, JP;
Takeshi Tokunaga, Tokyo, JP;
Tetsuya Sadaki, Tokyo, JP;
TOKAI CARBON CO., LTD., Tokyo, JP;
Abstract
A CVD-SiC formed body has low light transmittance and high resistivity, and may suitably be used as a member for an etcher that is used for a semiconductor production process, for example. The SiC formed body is formed using a CVD method, and includes 1 to 30 mass ppm of boron atoms, and more than 100 mass ppm and 1000 mass ppm or less of nitrogen atoms. The SiC formed body preferably has a resistivity of more than 10 Ω·cm and 100,000 Ω·cm or less, and a light transmittance at a wavelength of 950 nm of 0 to 1%.