The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2018
Filed:
Sep. 26, 2014
Kanto Denka Kogyo Co., Ltd., Tokyo, JP;
Katsuhiro Saito, Tokyo, JP;
Shinji Mita, Tokyo, JP;
Hiromi Oya, Okayama, JP;
Shinsuke Katayama, Okayama, JP;
Yasuyuki Fujiwara, Okayama, JP;
Ichiro Morimoto, Okayama, JP;
Hiroyuki Uehara, Gunma, JP;
Norihisa Kimura, Okayama, JP;
KANTO DENKA KOGYO CO., LTD., Tokyo, JP;
Abstract
A method for obtaining high-purity phosphorus pentafluoride (PF), which is industrially useful in the fields of semiconductors and batteries, from PFcontaining a gas mixture of HCl, HF, and so on. Specifically, provided is a process for purifying phosphorus pentafluoride including () an immobilization step in which phosphorus pentafluoride containing a mixture is brought into contact with a metal fluoride (MF; M is an n-valent metal) having a specific surface area of 1.0 m/g or more at 40° to 150° C. to immobilize phosphorus pentafluoride in the form of a hexafluorophosphate (M(PF)), () a separation step in which the mixture remaining in the gas phase is expelled out of the reaction system to separate the mixture from the hexafluorophosphate, and () a heat-decomposition step in which the hexafluorophosphate freed of the mixture is heated at 150° to 400° C. under a pressure of −0.1 to 0.1 MPa·G to give phosphorus pentafluoride.