The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 15, 2018

Filed:

Jul. 22, 2015
Applicant:

Hitachi Kokusai Electric Inc., Tokyo, JP;

Inventor:

Yasutoshi Tsubota, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23K 1/00 (2006.01); H05K 3/34 (2006.01); B23K 3/04 (2006.01); B23K 3/08 (2006.01); B23K 3/06 (2006.01); B23K 1/012 (2006.01); B23K 1/20 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H05K 3/3494 (2013.01); B23K 1/0016 (2013.01); B23K 1/012 (2013.01); B23K 1/203 (2013.01); B23K 1/206 (2013.01); B23K 3/04 (2013.01); B23K 3/06 (2013.01); B23K 3/082 (2013.01); H01L 21/02068 (2013.01); H01L 21/67109 (2013.01); H01L 21/67207 (2013.01); H01L 24/11 (2013.01); H01L 24/741 (2013.01); H01L 2224/05022 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/131 (2013.01); H01L 2224/94 (2013.01); H05K 2203/043 (2013.01); H05K 2203/087 (2013.01); H05K 2203/095 (2013.01);
Abstract

Manufacturing quality of a semiconductor device can be improved, and manufacturing throughput can be improved. A method of manufacturing a semiconductor device includes (a) placing a substrate on a substrate supporting unit installed in a processing chamber, the substrate having thereon a solder with an oxygen-containing film on a surface thereof, (b) reducing the oxygen-containing film by supplying a reducing gas into the processing chamber while maintaining a thermal conductivity of an inner atmosphere of the processing chamber at a first thermal conductivity, and (c) melting the solder by supplying a thermally conductive gas into the processing chamber while maintaining the thermal conductivity of the inner atmosphere of the processing chamber at a second thermal conductivity higher than the first thermal conductivity.


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