The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2018
Filed:
Jun. 30, 2016
Circuits and operating methods thereof for correcting phase errors caused by gallium nitride devices
Applicant:
Macom Technology Solutions Holdings, Inc., Lowell, MA (US);
Inventor:
Damian McCann, Rossmoor, CA (US);
Assignee:
MACOM Technology Solutions Holdings, Inc., Lowell, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04W 56/00 (2009.01); H03F 1/02 (2006.01); H03F 3/193 (2006.01);
U.S. Cl.
CPC ...
H04W 56/0035 (2013.01); H03F 1/0233 (2013.01); H03F 3/193 (2013.01); H03F 2200/102 (2013.01); H03F 2200/165 (2013.01); H03F 2200/339 (2013.01); H03F 2200/451 (2013.01);
Abstract
Circuits and operating methods thereof for correcting phase errors introduced by amplifiers employing gallium nitride (GaN) transistors are described. The phase errors are caused by trapping effects exhibited by the GaN transistors. The circuits described herein pre-distort the phase of the input signal to compensate for the phase error introduced by the amplifier. Thereby, the phase of the output signal of the amplifier has a reduced phase error. For example, the output signal may have a near zero (or zero) phase error.