The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2018
Filed:
May. 28, 2014
Denso Corporation, Kariya, Aichi-pref., JP;
Kazuhiro Oyama, Kariya, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A protection circuit of a semiconductor device includes a high electron mobility transistor and a protection element. Between the drain and the gate of the high electron mobility transistor, the protection element includes: a thyristor; and a first resistor connected in series to the thyristor. Between the source and the gate of the high electron mobility transistor, the protection element includes: a second resistor and an interrupter that is connected in series to the second resistor. The interrupter interrupts a flow of a current between the drain and the gate when the thyristor is turned off, and the interrupter permits the current to flow between the drain and the gate when the thyristor is turned on.