The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 15, 2018

Filed:

Aug. 27, 2015
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Sven Gerhard, Alteglofsheim, DE;

Alfred Lell, Maxhütte-Haidhof, DE;

Joachim Pfeiffer, Obertraubling, DE;

Jens Mueller, Regensburg, DE;

Christoph Eichler, Donaustauf, DE;

Thomas Veit, Mintraching, DE;

Thomas Adlhoch, Brennberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/02 (2006.01); H01S 5/22 (2006.01);
U.S. Cl.
CPC ...
H01S 5/0202 (2013.01); H01S 5/0203 (2013.01); H01S 5/22 (2013.01);
Abstract

A method of producing a laser chip includes providing a semiconductor wafer; creating a plurality of depressions arranged one behind another along a breaking direction on a top side of the semiconductor wafer, wherein 1) each depression includes a front boundary face and a rear boundary face successively in the breaking direction, 2) in at least one depression, the rear boundary face is inclined by an angle of 95° to 170° relative to the top side of the semiconductor wafer, 3) at least one depression includes a shoulder adjacent to the rear boundary face, and 4) the shoulder includes a shoulder face parallel to the top side of the semiconductor wafer and adjacent to the rear boundary face; and breaking the semiconductor wafer in the breaking direction at a breaking plane oriented perpendicularly to the top side of the semiconductor wafer and which runs through the depressions.


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