The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2018
Filed:
Jan. 18, 2017
Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;
Kengo Nagata, Kiyosu, JP;
TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;
Abstract
The present invention provides a Group III nitride semiconductor light-emitting device in which electrons and holes are suppressed from being captured by threading dislocation, and a production method therefor. The light-emitting device comprises an n-type contact layer, an n-side electrostatic breakdown preventing layer, an n-side superlattice layer, a light-emitting layer, a p-type cladding layer, a p-type contact layer, a transparent electrode, an n-electrode, and a p-electrode. The light-emitting device has a plurality of pits extending from the n-type semiconductor layer to the p-type semiconductor layer. The n-side electrostatic breakdown preventing layer has an n-type AlGaN layer. The n-type AlGaN layer includes starting points of the pits.