The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 15, 2018

Filed:

Dec. 30, 2015
Applicant:

Solarcity Corporation, San Mateo, CA (US);

Inventors:

Yongkee Chae, San Ramon, CA (US);

Jianming Fu, Palo Alto, CA (US);

Assignee:

TESLA, INC., Palo Alto, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/18 (2006.01); C23C 16/455 (2006.01); H01L 31/0216 (2014.01); H01L 31/0224 (2006.01); H01L 31/028 (2006.01); H01L 31/0352 (2006.01); H01L 31/0376 (2006.01); H01L 31/074 (2012.01); H01L 31/20 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1868 (2013.01); C23C 16/455 (2013.01); H01L 21/67161 (2013.01); H01L 21/67173 (2013.01); H01L 31/028 (2013.01); H01L 31/02167 (2013.01); H01L 31/022425 (2013.01); H01L 31/022466 (2013.01); H01L 31/03529 (2013.01); H01L 31/03762 (2013.01); H01L 31/074 (2013.01); H01L 31/1804 (2013.01); H01L 31/202 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract

One embodiment of the present invention can provide a system for fabricating a photovoltaic structure. During fabrication, the system can deposit a first passivation layer on a first side of a Si base layer of the photovoltaic structure using a static chemical vapor deposition process. The static chemical vapor deposition process can be performed inside a first reaction chamber. The system can then transfer the photovoltaic structure from the first reaction chamber to a second reaction chamber without the photovoltaic structure leaving a common vacuum space comprising both reaction chambers, and deposit a second passivation layer on the first passivation layer using an inline chemical vapor deposition process. The inline chemical vapor deposition process can be performed inside the second reaction chamber.


Find Patent Forward Citations

Loading…