The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2018
Filed:
Aug. 13, 2015
Applicant:
Seoul Viosys Co., Ltd., Ansan-si, KR;
Inventors:
Ki Yon Park, Ansan-si, KR;
Hwa Mok Kim, Ansan-si, KR;
Young Hwan Son, Ansan-si, KR;
Daewoong Suh, Ansan-si, KR;
Assignee:
Seoul Viosys Co., Ltd., Ansan-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/18 (2006.01); H01L 31/108 (2006.01); H01L 31/0224 (2006.01); H01L 31/0352 (2006.01); H01L 31/0392 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1828 (2013.01); H01L 31/022483 (2013.01); H01L 31/0392 (2013.01); H01L 31/03529 (2013.01); H01L 31/108 (2013.01); H01L 31/1832 (2013.01); Y02E 10/50 (2013.01); Y02E 10/52 (2013.01);
Abstract
A method of forming a light detection device includes forming a non-porous layer on a substrate, forming a light absorption layer on the non-porous layer, the light absorption layer including pores formed in a surface thereof, forming a Schottky layer on the surface of the light absorption layer and in the pores thereof, and forming a first electrode layer on the Schottky layer.