The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2018
Filed:
Aug. 14, 2015
Jin-bum Kim, Seongnam-si, KR;
Seok-hoon Kim, Suwon-si, KR;
Chul Kim, Hwaseong-si, KR;
Kwan-heum Lee, Yongin-si, KR;
Byeong-chan Lee, Asan-si, KR;
Cho-eun Lee, Asan-si, KR;
Su-jin Jung, Asan-si, KR;
Bon-young Koo, Asan-si, KR;
Jin-Bum Kim, Seongnam-si, KR;
Seok-Hoon Kim, Suwon-si, KR;
Chul Kim, Hwaseong-si, KR;
Kwan-Heum Lee, Yongin-si, KR;
Byeong-Chan Lee, Asan-si, KR;
Cho-Eun Lee, Asan-si, KR;
Su-Jin Jung, Asan-si, KR;
Bon-Young Koo, Asan-si, KR;
Abstract
Provided are semiconductor devices that include an active pattern on a substrate, first and second gate electrodes on the active pattern and arranged in a first direction relative to one another and a first source/drain region in a first trench that extends into the active pattern between the first and second gate electrodes. The first source/drain region includes a first epitaxial layer that is configured to fill the first trench and that includes at least one plane defect that originates at a top portion of the first epitaxial layer and extends towards a bottom portion of the first epitaxial layer.