The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2018
Filed:
Dec. 20, 2016
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Yoichi Kawano, Setagaya, JP;
FUJITSU LIMITED, Kawasaki, JP;
Abstract
A semiconductor device includes: diffusion layers that are formed over a semiconductor substrate in a first direction, that are separated from one another by separation regions, and that serve as drain regions or source regions of respective transistors; a gate electrode of the transistors, which is formed in the first direction so as to straddle the diffusion layers; gate extraction wirings that are formed above the separation regions so as to sandwich therebetween the individual diffusion layers in the first direction, that are electrically coupled to the gate electrode above the separation regions, and that supply a gate signal to the gate electrode.