The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2018
Filed:
Mar. 09, 2015
Applicant:
Robert Bosch Gmbh, Stuttgart, DE;
Inventors:
Achim Trautmann, Leonberg, DE;
Christian Tobias Banzhaf, Laichingen, DE;
Assignee:
Robert Bosch GmbH, Stuttgart, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/16 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/407 (2013.01); H01L 29/1608 (2013.01); H01L 29/41766 (2013.01); H01L 29/4236 (2013.01); H01L 29/66068 (2013.01); H01L 29/66734 (2013.01); H01L 29/7813 (2013.01);
Abstract
A substrate includes a trench with walls and a base. The substrate also includes a dielectric field plate. The dielectric field plate consists of at least one first dielectric layer, which only adjoins lower sections of the walls of the trench and the base of the trench. Parasitic capacitances can be reduced when using this substrate for power transistors.
Trautmann, Achim. (2018). Method for producing a dielectric field plate in a substrate trench, a corresponding substrate, and a power transistor (U.S. Patent No. 9972690). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9972690
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile