The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2018
Filed:
Feb. 12, 2015
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;
Abstract
To provide a semiconductor device having improved performances. A semiconductor substrate has, in the surface layer portion thereof, an ntype semiconductor region for source and an ntype semiconductor region for drain separated from each other. The semiconductor substrate has, on the main surface thereof between the ntype semiconductor region for source and the ntype semiconductor region for drain, a gate electrode via an insulating film as a gate insulating film. The semiconductor substrate has, in the main surface thereof between the channel formation region below the gate electrode and the ntype semiconductor region for drain, a LOCOS oxide film and an STI insulating. Of the LOCOS oxide film and the STI insulating film, the LOCOS oxide film is located on the side of the channel formation region and the STI insulating film is on the side of the ntype semiconductor region DR for drain.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile