The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2018
Filed:
Jul. 28, 2015
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Jumpei Tajima, Koganei, JP;
Hiroshi Ono, Setagaya, JP;
Toshihide Ito, Minato, JP;
Kenjiro Uesugi, Fuchu, JP;
Shinya Nunoue, Ichikawa, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
According to one embodiment, a semiconductor light emitting element () includes a metal layer (), a first to a fourth semiconductor layers (), a first and a second light emitting layers (), a first to a sixth electrodes (e-e), and a first inter-element interconnect section (). The first semiconductor layer () includes a first to a third regions (r-r). The second semiconductor layer () is provided between the first region (r) and the metal layer () and between the second region (r) and the metal layer (). The third semiconductor layer () includes a fourth to a sixth regions (r-r). The fourth semiconductor layer () is provided between the fourth region (r) and the metal layer () and between the fifth region (r) and the metal layer (). The first inter-element interconnect section () is provided between the second electrode (e) and the metal layer () and between the sixth electrode (e) and the metal layer ().