The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2018
Filed:
Jun. 22, 2015
Applicant:
SK Hynix Inc., Icheon, KR;
Inventors:
Tae Su Jang, Gwacheon, KR;
Jeong Seob Kye, Suwon, KR;
Assignee:
SK HYNIX INC., Icheon, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10823 (2013.01); H01L 29/0649 (2013.01); H01L 29/4236 (2013.01); H01L 29/49 (2013.01); H01L 29/7831 (2013.01);
Abstract
A semiconductor device that has a passing gate with a single gate electrode and a main gate with lower and upper gate electrodes mitigates gate induced drain leakage (GIDL). Additional elements that help mitigate GIDL include the upper gate electrode having a lower work function than the lower gate electrode, and the lower gate electrode being disposed below a storage node junction region while the upper gate electrode is disposed at a same level as the storage node junction region.