The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 15, 2018

Filed:

Jul. 01, 2017
Applicant:

Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;

Inventor:

Yuki Yagyu, Gunma, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/00 (2006.01); H01L 23/495 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 24/85 (2013.01); H01L 23/3107 (2013.01); H01L 23/49513 (2013.01); H01L 23/49555 (2013.01); H01L 23/49558 (2013.01); H01L 23/49582 (2013.01); H01L 24/05 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 24/78 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/45687 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48101 (2013.01); H01L 2224/48245 (2013.01); H01L 2224/7815 (2013.01); H01L 2224/78756 (2013.01); H01L 2224/8502 (2013.01); H01L 2224/85051 (2013.01); H01L 2224/85065 (2013.01); H01L 2224/85075 (2013.01); H01L 2224/85355 (2013.01); H01L 2224/85359 (2013.01); H01L 2224/85898 (2013.01); H01L 2224/85948 (2013.01); H01L 2224/85986 (2013.01); H01L 2924/0541 (2013.01);
Abstract

Reliability of a semiconductor device is improved. A wire bonding step includes a step of exposing a wire and a pad electrode to a reducing gas atmosphere, forming a first hydroxyl layer on a surface of a ball portion, and forming a second hydroxyl layer on a surface of the pad electrode, a first bonding step of temporarily joining the ball portion to the pad electrode through the first hydroxyl layer and the second hydroxyl layer, and after the first bonding step, a step of actually joining the ball portion to the pad electrode by performing a heat treatment on a semiconductor chip and a base material.


Find Patent Forward Citations

Yagyu, Yuki. (2018). Method of manufacturing semiconductor device (U.S. Patent No. 9972598). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9972598

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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