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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9972591 B1

PDFFull Text
Date of Patent:
May. 15, 2018

Filed:

Jan. 30, 2017

Method of manufacturing semiconductor device

Applicant:

Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;

Inventor:

Hideki Harano, Gunma, JP;

Assignee:

Renesas Electronics Corporation, Tokyo, JP;

Attorney:

Shapiro, Gabor and Rosenberger, PLLC

Primary Examiner:

Jamie C Niesz

Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 21/56 (2006.01);
U.S. Cl.
CPC ...
H01L 24/11 (2013.01); H01L 21/563 (2013.01); H01L 23/3142 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/03464 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05083 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05144 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/11334 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/13006 (2013.01); H01L 2224/13014 (2013.01); H01L 2224/13016 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13023 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13164 (2013.01); H01L 2224/14131 (2013.01); H01L 2224/16113 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81203 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/831 (2013.01); H01L 2224/92125 (2013.01); H01L 2924/014 (2013.01); H01L 2924/05042 (2013.01); H01L 2924/05442 (2013.01); H01L 2924/07025 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/2075 (2013.01); H01L 2924/20751 (2013.01);
Abstract

To improve reliability of a semiconductor device, in a method of manufacturing the semiconductor device, a semiconductor substrate having an insulating film in which an opening that exposes each of a plurality of electrode pads is formed is provided, and a flux member including conductive particles is arranged over each of the electrode pads. Thereafter, a solder ball is arranged over each of the electrode pads via the flux member, and is then heated via the flux member so that the solder ball is bonded to each of the electrode pads. The width of the opening of the insulating film is smaller than the width (diameter) of the solder ball.

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